| BMTI's IC Packaging and Testing Service
Beijing Microelectronics Technology Institute (BMTI), with its IC packaging and testing production line, specializes in high reliable IC packaging, testing, screening, reliability examination and failure analysis services. We will rely on advanced technology and equipment, good corporate reputation, professional service to provide customers with high reliable IC one-stop service.
Service Capability of Full-custom Package Design
We are committed to full-custom substrate design, SI/PI simulation analysis, structural reliability simulation analysis and thermal simulation analysis of integrated circuits ceramic packages.
| Full-Custom Package Design
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| Package Design
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Highest Frequency: 12Gbps
Maximum Number of Interconnects: 10155
Minimum Interconnect Pitch: 147μm
Maximum Size: 52mm×52mm
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| SI/PI Simulation Analysis
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SI Simulation Capability: insertion loss/return loss analysis, parasitic parameters analysis, timing analysis, eye-diagram analysis, etc.
PI Simulation Capability: IR drop analysis, current density analysis, frequency-domain impedance of PDN analysis, decoupling capacitor analysis, harmonic analysis, etc.
Model Extraction Format: IBIS, SPICE, SnP, etc.
Simulation Analysis Error: 10%
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| Structural-Mechanics Simulation Analysis
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Simulation Capability: thermal cycling, frequency-sweep vibration, constant acceleration and mechanical shock
Package Type: FC-CCGA, WB-BGA, SIP
Maximum package size: 52mm×52mm
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| Thermal Simulation Analysis
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Simulation Capability: Rjc/Rjb/Rja analysis, thermal dissipation analysis
Simulation Measurement Error: less than 10%
Maximum Power: 82W
Minimum Design Rjc: 0.35K/W
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Service Capability of Packaging/Assembly Center
BMTI is equipped with world-class ceramic packaging processing capabilities, including wire bonded ceramic packaging production line, flip-chip packaging production line, power device and hybrid module packaging production line. All production lines have passed National Military Standard GJB597 and GJB7400 standard certification, and can provide packaging services for all types of ceramic packaging substrates and plastic packaging substrates including but not limited to: TO, SMD, CDIP, CLCC, CPGA, CQFP, WB-CBGA, FC-CBG, FC-CCGA. The quality level can meet the national military standard B level or space YB level, which can also be packaged and produced according to user-customized requirements. It has the packaging/assembly capabilities of ultra-large-scale monolithic integrated circuits, hybrid integrated circuits, three-dimensional assembly and micro-systems, power devices and optoelectronic devices. The annual packaging capacity is more than 1 million pieces.
| Monolithic integrated circuit wire bond packaging process capability
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| Wafer thinning
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4/6/8/12 inch wafer thinning.
The minimum thickness of the thinned: the equipment capacity can reach 25μm, and the minimum product is 200μm.
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| Die saw
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4/6/8/12 inch die saw.
Minimum saw channel width:60μm, the recommended saw channel width of the product is 120μm.
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| Die attach
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Resin adhesive(conductive/non-conductive adhesive)、Alloy solder pieces、DDF film；
Chip size:0.5mm´0.5mm～24mm´24mm.
Chip stacking layers:≥8.
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| Wire Bonding
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Gold wire: Wire diameter18μm～50μm.
Aluminum wire: Wire diameter25μm～75μm and 100μm～500μm.
Layer of bonding fingers:1～6.
Maximum number of bonding wires: 1000.
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| Sealing
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Melt welding seal、Parallel seam welding、Stored Energy welding
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| Marking
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Pad stamp、Inkjet Marking、Laser Marking
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| Monolithic integrated circuit flip-chip packaging process capability
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| Bumping
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Wafer size: 12′Max，Composition: PbSn、SnAg、SAC etc.
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| Diameter: Φ60μm～300μm，Pitch: 120μm Min
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| Flip chip
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Chip size: 3mm×3mm～50m×50mm
Composition：PbSn、SnAg、Cu Pillar etc.
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| Device structures: Hermetic、Non-hermetic
Substrate: HTCC、LTCC、Plastic
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| BGA
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Ball Size：0.3mm～0.9mm
Composition: PbSn、SnAg、SAC etc.
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| Substrate: HTCC、LTCC、Plastic
Coplanarity: 150μm Max
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| CCGA
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Column size:Φ0.51mm/H:2.21mm
Composition: 80Pb20Sn、90Pb10Sn
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| Pitch:1.0mm、1.27mm
Coplanarity:100μm Min
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| Power devices and Hybrid Modules packaging process capability
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| Glass sealed diode
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Packaging form：D5A、D5B、D5D、D3D、D3E，metallurgical bonding：Category I
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| Sealing method：Glass hermetic package，Electrode welding，Alloy solder
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| Power devices
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Sealing method：TO-18、TO-39、TO-66、TO-254、TO-257、TO-258、TO-259、SMD-0.5、SMD-1、SMD-2
Chip soldering：Alloy solder
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| Bonding ability：100μm、250μm、380μm
Sealing method：Resistance Welding
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| Diode array
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Packaging form：FP16，Solder composition：AuSn、AgPbSn、Nano silver
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| Number of chips：8～16，Bonding ability：Gold wire、Aluminum wire
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| System in package/ Micro assembly
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| Mixed assembly
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Chip thickness:≥200μm
Chip gap: ≥1mm
Component size：0805、0603、0402 etc.
Component number：≤500
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| 2.5D packaging
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Silicon interposer size：25mm×25mm
Micro-bump number：≤20000
Active chip number：≤8
Active chip size：≤22mm×20mm
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| 3D packaging
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Chip size：≤10mm×10mm
Chip thickness：≥100μm
TSV diameter：≥10μm
TSV pitch：≥300μm
Stacked layer：10 layers
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Service Capability of Testing Center
With domestic leading circuit test and reliability experiment ability, the Testing Center supports the test program development, production and quality assurance services of core signal processor such as 100 million gate FPGA, high performance processor, high speed and high resolution converter etc. Moreover, it has more than 40 sets of high-performance ATE such as UltraFLEX and V93000, and 2048 channels, which can meet the requirements of all kinds of VLSI wafer test and final test.
| Integrated Circuit Test
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| Business Category
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CP Test（Wafer Test）：4-12 inches，PCM parameters and ESD/LatchUp test，the test program development and design verification
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| Test Capability
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2048 channels，frequency 1.6Gbps，256M vector memory, 60Gbps high-speed data rate
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| Arbitrary Waveform Generator(AWG): 24bits precision,500Msps sampling rate; Digitizer: 24bits precision, 200Msps sampling rate
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The Testing Center has complete screening and quality conformance inspection capabilities for VLSI and discrete components for military/aerospace applications. It has passed CNAS and DILAC qualification certification, and has the guarantee conditions of environment, machinery, life and other reliability tests that meet the requirements of the national military standard, with an annual capacity of more than 1 million.
| Reliability Testing
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| Burn-in Tests
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Burn-in/Life characterization tests（integrated circuit）
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Frequency: 1Hz～300MHz; Voltage:0.5～18V;
Temperature: 25～150℃
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| High temperature reverse bias / Block life (Discrete device)
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Voltage: 0V～2000V; Temperature: 25～200℃
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| Power burn-in / Steady-state life
(Discrete device)
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Forward current:0A～6A;Reverse voltage：0V～2000V
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| Mechanical Tests
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Constant acceleration
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Maximum acceleration:30000g
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| Mechanical shock
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Minimum pulse width:0.2ms;
Maximum acceleration:5000g
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| Vibration fatigue
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Thrust：2.67KN;Maximum acceleration:110g;
Frequency:5Hz～2500Hz
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| Environment Tests
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Stabilization bake
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Temperature:25～300℃
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| Thermal shock
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Temperature:-65℃～150℃
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| Temperature cycling
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High temperature:200℃;Low temperature:-65℃
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| Moisture resistance
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Temperature:-70℃～180℃;Humidity:10%RH～98%RH
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| HAST
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Temperature:+105℃～143℃;Humidity:75%～100%;
Pressure：0.1～0.3Mpa
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| Verification
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PIND、seal、X-Ray、SAM
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Service Capability of Failure Analysis
In 1999, BMTI’s Testing Center acquired the qualification of "Large and VLSI testing and failure analysis center" authorized by Aerospace Science and Technology Corporation, and it owns the comprehensive analysis ability of semiconductor device failure analysis, defect location, DPA, Structure analysis, electrical performance classification, thermal performance analysis and so on.
| Failure Analysis
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| Failure analysis
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Appearance inspection, I-V characteristic test, EMMI/OBIRCH/IR thermograph and other failure point location, morphology micro-analysis, metallographic analysis, FIB ,SEM, and ESD analysis
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| DPA
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External visual inspection, PIND inspection, ultrasonic scanning, X-ray, internal atmosphere inspection, internal visual inspection, bonding strength, chip shear strength, SEM
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| Structure analysis
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Marking, shell, outer lead and other packaging shell analysis, bonding system analysis and evaluation chip bonding analysis and assessment, chip structure analysis and appraisal
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| Electric characteristic analysis
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Anti-static ability testing, anti-latching ability testing and semiconductor parameter analysis
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| Thermal analysis
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Production qualification of heat distribution and resistance test
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Production Qualifications
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GJB9001C-2017 Quality Control System
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VLSI National Military Standard Assembly Line
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Laboratory Accreditation Certificate authorized by China National Accreditation Service for Conformity Assessment
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China Aerospace Science and Technology Corporation Reliability Testing Center - China Aerospace Times Electronics Corporation Sub-Center
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China Aerospace Science and Technology Corporation Large and VLSI Testing Failure Analysis Center
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